The rapid development of bulk β-Ga2O3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to their large bandgap (ca 4.9 eV) and large breakdown electric field is about 8 MV/cm. Low cost and high crystal quality of large β-Ga2O3 single-crystal substrates can be attained by melting growth technique. In this presentation, we first present an overview of the properties of β-Ga2O3 crystals in bulk form. Then，thes effect of dopant on β-Ga2O3 crystal properties will be presented. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.