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Fundamental Properties and Application of β-Ga2O3
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Update time: 01-17-2019
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Speaker: Dr. H.F Mohamed

Time: 13:00 pm, January 17, 2019
Venue:Yizhi Hall (West Campus)

Abstract:

The rapid development of bulk β-Ga2O3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to their large bandgap (ca 4.9 eV) and large breakdown electric field is about 8 MV/cm. Low cost and high crystal quality of large β-Ga2O3 single-crystal substrates can be attained by melting growth technique. In this presentation, we first present an overview of the properties of β-Ga2O3 crystals in bulk form. Then,thes effect of dopant on β-Ga2O3 crystal properties will be presented. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.

@ Shanghai Institute of Optics and Fine Mechanics Tel:02169918000 Shanghai ICP NO.0501538